| Number | Content | Specification Parameters |
|---|---|---|
| 1 | Overall structure | The system with load port is divided into front-end equipment operation unit, front-end EFEM unit and plasma processing unit, and the front-end EFEM system and plasma processing unit are designed separately |
| 2 | Plasma source | RF plasma source or dual frequency plasma source |
| 3 | Reaction chamber | The standard design is double reaction chamber, and single reaction chamber and multi-reaction chamber structure can be customized according to requirements |
| 4 | Mechanical transfer | Single-arm or double-arm high-precision manipulator |
| 5 | Wafer lifting | Mechanical Wafer pin lifting structure, Wafer pin adopts specific process |
| 6 | Front vacuum pump | Dry vacuum pump, choose 100-300m3/h specification according to the installation location and process |
| 7 | High Vacuum Pump | Molecular pump (water cooling or CDA cooling) |
| 8 | Process Pressure Control | Automatic pressure regulating butterfly valve |
| 9 | Vacuum detection | Pipeline vacuum gauge, full range vacuum gauge for reaction chamber, process vacuum gauge, differential pressure switch |
| 10 | Process gas type | Standard configuration of high-purity Ar, N2, O2, other high-purity process gases can be added |
| Main applications of the equipment: surface pretreatment before wafer-level packaging, surface activation before wafer-level bonding, surface activation before photoresist coating, removal of small particles on the wafer surface, removal of organic residues on the surface, etc. Main features of the equipment: Compatible with multi-size wafers, multi-reaction chamber customization, ultra-clean reaction chamber, effective control of various pollutants, control of environmental pollutants in the whole machine space, radio frequency plasma generator or dual-frequency plasma generator , Wafer surface damage is small, can be used for surface activation of patterned wafers, high plasma density, good uniformity. |
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